A Comparative Investigation on the Microstructure and Thermal Resistance of W-Film Sensor Using dc Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering

Traditional dc magnetron sputtering has a low ionization rate when preparing metallic thin films. With the development of film science and market demand for material applications, it is necessary to improve density magnetron-sputtered High-power pulsed (HiPIMS) technology physical vapor deposition with high energy. Therefore, in this work, HiPIMS was applied prepare tungsten films compare surface morphology microstructure deposited using (dcMS) under different pulse lengths, as well related thermal resistance performance, followed by annealing treatment comparative analysis. We used AFM, SEM, XRD, plasma characterization testing comprehensively analyze changes TCR value, stability, repeatability other performance thin-film sensor technology. It determined that prepared method denser, fewer defects, stable. The 400 °C annealed sample 100 μs length reaches largest recorded values 1.05 × 10−3 K−1. In addition, shows better stability repeated tests.